IPD60R520CPBTMA1
MOSFET N-CH 600V 6.8A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CP series N-Channel Power MOSFET, IPD60R520CPBTMA1, is designed for high-efficiency power conversion. This device features a 600 V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 6.8 A at 25°C (Tc), with a maximum power dissipation of 66 W (Tc). The on-resistance (Rds On) is specified at a maximum of 520 mOhm at 3.8 A and 10 V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 31 nC and input capacitance (Ciss) of 630 pF. The IPD60R520CPBTMA1 is housed in a PG-TO252-3 (DPAK) surface-mount package and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™ CPRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 100 V |
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