IPD60R520C6ATMA1
MOSFET N-CH 600V 8.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 series N-channel power MOSFET, part number IPD60R520C6ATMA1. This device features a 600V drain-source breakdown voltage and a continuous drain current of 8.1A at 25°C. The IPD60R520C6ATMA1 offers a low on-resistance of 520mOhm at 2.8A and 10V gate drive. It is packaged in a PG-TO252-3 (DPAK) surface-mount configuration, suitable for high-efficiency power conversion applications in sectors such as industrial power supplies and LED lighting. Key parameters include a maximum power dissipation of 66W (Tc), a gate charge of 23.4 nC at 10V, and input capacitance of 512 pF at 100V. The operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™ C6RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 230µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 512 pF @ 100 V |
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