IPD60R460CEAUMA1
CONSUMERManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET, part number IPD60R460CEAUMA1, offers a 600V drain-source voltage and a continuous drain current of 13.1A at 25°C (Tj). This surface mount device, packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (PG-TO252-3-344), features a maximum power dissipation of 74W. The Rds On is specified at 460mOhm maximum at 3.4A and 10V gate-source voltage. With a gate charge of 28nC at 10V and input capacitance of 620pF at 100V, this MOSFET is suitable for applications requiring high efficiency and reliable performance. It operates across a temperature range of -40°C to 150°C (TJ). This component finds application in consumer electronics and power supply units.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.1A (Tj) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W |
| Vgs(th) (Max) @ Id | 3.5V @ 280µA |
| Supplier Device Package | PG-TO252-3-344 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 100 V |
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