IPD60R460CEATMA1
MOSFET N-CH 600V 9.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET, part number IPD60R460CEATMA1. This device features a 600V drain-source breakdown voltage and a continuous drain current of 9.1A (Tc). The low on-resistance of 460mOhm is specified at 3.4A, 10V. With a maximum power dissipation of 74W (Tc), this component is suitable for surface mount applications utilizing the PG-TO252-3 package. Key parameters include a gate charge of 28nC @ 10V and an input capacitance of 620pF @ 100V. The IPD60R460CEATMA1 finds application in power supply units and industrial power systems.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 280µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 100 V |
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