IPD60R450E6ATMA1
MOSFET N-CH 600V 9.2A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ E6 series N-Channel MOSFET, part number IPD60R450E6ATMA1, features a 600V drain-source breakdown voltage. This surface mount device, housed in a TO-252-3 (DPAK) package, offers a continuous drain current of 9.2A at 25°C with a maximum power dissipation of 74W. The on-resistance (Rds On) is specified at 450mOhm maximum at 3.4A and 10V gate-source voltage. Key parameters include a gate charge of 28 nC at 10V and an input capacitance of 620 pF at 100V. This component is suitable for applications in server power supplies, industrial power supplies, and solar inverters. The operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™ E6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 280µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 100 V |
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