IPD60R400CEATMA1
MOSFET N-CH 600V 10.3A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET IPD60R400CEATMA1 offers a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10.3A at 25°C. This device features a maximum on-resistance (Rds On) of 400mOhm at 3.8A and 10V gate-source voltage (Vgs). The IPD60R400CEATMA1 has a gate charge (Qg) of 32 nC at 10V and an input capacitance (Ciss) of 700 pF at 100V. With a maximum power dissipation of 83W (Tc), it is suitable for high-frequency switching applications. The device is housed in a PG-TO252-3 (TO-252-3, DPAK) surface-mount package and operates within a temperature range of -40°C to 150°C. This component is commonly utilized in power supplies, lighting, and industrial applications.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 300µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 100 V |
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