IPD60R3K3C6
MOSFET N-CH 600V 1.7A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 series, part number IPD60R3K3C6, is a 600 V N-channel power MOSFET. This surface mount device features a low on-resistance of 3.3 Ohm at 500mA and 10V gate drive, with a continuous drain current capability of 1.7A at 25°C. The IPD60R3K3C6 offers a maximum power dissipation of 18.1W (Tc) and a gate charge of 4.6 nC at 10V. Its TO-252-3 (DPAK) package is suitable for applications in consumer electronics and industrial power supplies. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ C6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 18.1W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 93 pF @ 100 V |
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