IPD60R385CPBTMA1
MOSFET N-CH 600V 9A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CP series N-Channel Power MOSFET, part number IPD60R385CPBTMA1. This 600V device features a continuous drain current capability of 9A (Tc) and a maximum power dissipation of 83W (Tc). The IPD60R385CPBTMA1 offers a low on-resistance of 385mOhm at 5.2A, 10V, with a gate-source voltage of 10V. Key parameters include a gate charge (Qg) of 22 nC @ 10V and input capacitance (Ciss) of 790 pF @ 100V. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This component is suitable for applications in power supply units, lighting, and consumer electronics.
Additional Information
Series: CoolMOS™ CPRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 340µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 100 V |
Request a Quote
Clients Also Buy
IPB60R099CPATMA1
MOSFET N-CH 600V 31A TO263-3
IPD60R385CPATMA1
MOSFET N-CH 600V 9A TO252-3
IPL60R199CPAUMA1
MOSFET N-CH 600V 16.4A 4VSON
