IPD60R385CPATMA1
MOSFET N-CH 600V 9A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CP series N-channel power MOSFET, IPD60R385CPATMA1, offers a 600V drain-source breakdown voltage and a continuous drain current of 9A at 25°C (Tc). This surface mount device features a maximum on-resistance of 385mOhm at 5.2A and 10V. The PG-TO252-3 package provides a robust solution for demanding applications. Key parameters include a gate charge of 22 nC (max) at 10V and an input capacitance of 790 pF (max) at 100V. With a maximum power dissipation of 83W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for power supply, lighting, and industrial motor control applications.
Additional Information
Series: CoolMOS™ CPRoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 340µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 100 V |
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