IPD60R380P6BTMA1
MOSFET N-CH 600V 10.6A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ P6 series N-Channel Power MOSFET, IPD60R380P6BTMA1, offers a 600V drain-source breakdown voltage and a continuous drain current of 10.6A at 25°C (Tc). This device features a maximum on-resistance of 380mOhm at 3.8A and 10V Vgs, with a typical gate charge of 19 nC. The input capacitance (Ciss) is a maximum of 877 pF at 100V Vds. Designed for surface mounting in the PG-TO252-3 (DPAK) package, this MOSFET has a maximum power dissipation of 83W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). It is suitable for applications in power factor correction (PFC), switch-mode power supplies (SMPS), and general-purpose power conversion. The component is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: CoolMOS™ P6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 320µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 877 pF @ 100 V |
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