IPD60R380E6ATMA2
MOSFET N-CH 600V 10.6A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ E6 series N-Channel MOSFET, part number IPD60R380E6ATMA2, offers robust performance for demanding applications. This device features a 600V drain-source voltage (Vdss) and a continuous drain current capability of 10.6A (Tc) at 25°C. With a maximum power dissipation of 83W (Tc), it is designed for efficient operation. The Rds On (Max) is 380mOhm at 3.8A and 10V, complemented by a typical gate charge (Qg) of 32 nC @ 10V and input capacitance (Ciss) of 700 pF @ 100V. The MOSFET is housed in a PG-TO252-3 surface mount package, suitable for high-density board designs. Operating temperature range is -55°C to 150°C (TJ). This component finds use in power supply units, lighting, and industrial applications.
Additional Information
Series: CoolMOS™ E6RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 300µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 100 V |
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