IPD60R380C6ATMA1
MOSFET N-CH 600V 10.6A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 series N-channel Power MOSFET, part number IPD60R380C6ATMA1. This device features a 600V drain-source breakdown voltage and a continuous drain current capability of 10.6A at 25°C (Tc). The IPD60R380C6ATMA1 offers a maximum on-resistance of 380mOhm at 3.8A and 10V Vgs. Key parameters include a gate charge (Qg) of 32 nC at 10V and input capacitance (Ciss) of 700 pF at 100V. Designed for surface mounting, it is provided in the PG-TO252-3 (DPAK) package. Maximum power dissipation is rated at 83W (Tc). This component is suitable for applications in power supplies and industrial automation.
Additional Information
Series: CoolMOS™ C6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 100 V |
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