IPD60R2K0PFD7SAUMA1
MOSFET N-CH 600V 3A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ PFD7 series N-Channel Power MOSFET with part number IPD60R2K0PFD7SAUMA1. This device features a 600 V breakdown voltage and a continuous drain current of 3 A (Tc) at 25°C. The Rds On is a maximum of 2 Ohm at 500 mA, 10 V, with a gate charge (Qg) of 3.8 nC at 10 V. Input capacitance (Ciss) is 134 pF at 400 V. Designed for surface mounting in a TO-252-3, DPAK package, this MOSFET offers a maximum power dissipation of 20 W (Tc). It operates within a temperature range of -40°C to 150°C (TJ) and supports a gate-source voltage (Vgs) up to ±20V. This component is suitable for applications in power supply units and lighting.
Additional Information
Series: CoolMOS™ PFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 30µA |
| Supplier Device Package | PG-TO252-3-344 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 134 pF @ 400 V |
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