IPD60R2K0C6BTMA1
MOSFET N-CH 600V 2.4A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 N-Channel Power MOSFET, part number IPD60R2K0C6BTMA1, is engineered for high-performance power conversion applications. This device features a 600 V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.4 A at 25°C (Tc). With a maximum power dissipation of 22.3 W (Tc) and a low on-resistance (Rds On) of 2 O at 760 mA and 10 V, it delivers efficient switching performance. The MOSFET utilizes Metal Oxide technology and is packaged in a surface-mount PG-TO252-3 (DPAK) case, suitable for high-density designs. Key parameters include a gate charge (Qg) of 6.7 nC at 10 V and input capacitance (Ciss) of 140 pF at 100 V. This component is ideal for use in server power, industrial power supplies, and lighting applications. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ C6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 760mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 22.3W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 100 V |
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