IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-channel Power MOSFET, part number IPD60R280P7SAUMA1. This 600V device features a maximum continuous drain current of 12A (Tc) and a low on-resistance of 280mOhm at 3.8A, 10V. The TO-252-3 (DPAK) surface mount package offers a maximum power dissipation of 53W (Tc). Key parameters include a gate charge of 18 nC (max) at 10V and input capacitance of 761 pF (max) at 400V. Operating temperature range is -40°C to 150°C (TJ). This component is suitable for applications in power supply units, lighting, and industrial power systems. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 190µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 761 pF @ 400 V |
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