IPD60R280CFD7ATMA1
MOSFET N-CH 600V 9A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CFD7 series N-channel power MOSFET, IPD60R280CFD7ATMA1. This device features a 600V drain-source voltage (Vdss) and a continuous drain current of 9A (Tc). With a maximum on-resistance (Rds On) of 280mOhm at 3.6A and 10V Vgs, it offers efficient switching. The MOSFET is packaged in a TO-252-3 (DPAK) surface mount configuration and supports a gate charge of 18nC (Max) at 10V. Key parameters include 51W (Tc) maximum power dissipation and 807pF (Max) input capacitance. Typical applications include switch-mode power supplies (SMPS) and power factor correction (PFC) circuits in server, industrial, and consumer electronics. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 51W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 180µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 807 pF @ 400 V |
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