IPD60R1K5CEATMA1
MOSFET N-CH 600V 3.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-channel power MOSFET, part number IPD60R1K5CEATMA1. This device features a 600 V drain-source breakdown voltage and a continuous drain current capability of 3.1 A at 25°C (Tc), with a maximum power dissipation of 28 W (Tc). The N-channel MOSFET offers a low on-resistance of 1.5 Ohm maximum at 1.1 A drain current and 10 V gate-source voltage. Designed for surface mounting, it is supplied in the PG-TO252-3 package, also known as DPAK. Key parameters include a gate charge (Qg) of 9.4 nC at 10 V and input capacitance (Ciss) of 200 pF at 100 V. The operating temperature range is -40°C to 150°C (TJ). This component is suitable for applications in power supply units, lighting, and industrial systems.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |
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