IPD60R1K4C6
MOSFET N-CH 600V 3.2A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ C6 series N-channel power MOSFET, part number IPD60R1K4C6, offers 600V drain-source breakdown voltage and a continuous drain current of 3.2A at 25°C. This surface mount device, packaged in a PG-TO252-3 (DPAK), features a maximum on-resistance of 1.4 Ohm at 1.1A and 10V Vgs. With a gate charge of 9.4 nC at 10V and input capacitance of 200 pF at 100V, it is engineered for efficient switching. The component's maximum power dissipation is 28.4W (Tc). Suitable for applications in power supplies, lighting, and automotive sectors, it operates across a junction temperature range of -55°C to 150°C.
Additional Information
Series: CoolMOS™ C6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28.4W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |
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