IPD60R1K0CEATMA1
MOSFET N-CH 600V 4.3A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPD60R1K0CEATMA1 is a 600V N-Channel Power MOSFET from the CoolMOS™ CE series. This device features a maximum continuous drain current of 4.3A (Tc) and a maximum Rds On of 1Ohm at 1.5A, 10V. With a total power dissipation of 37W (Tc) and a gate charge of 13 nC @ 10V, it is suitable for demanding applications. The MOSFET is housed in a TO-252-3, DPAK package, facilitating surface mounting. Its robust design and 600V breakdown voltage make it applicable in power factor correction (PFC) circuits, switch-mode power supplies (SMPS), and lighting applications. Operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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