IPD60R180P7SE8228AUMA1
MOSFET N-CH 600V 18A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-Channel Power MOSFET, part number IPD60R180P7SE8228AUMA1, offers a 600V drain-source breakdown voltage and 18A continuous drain current at 25°C. This device features a maximum Rds(on) of 180mOhm at 5.6A, 10V, and a gate charge of 25nC at 10V. Designed for surface mounting in a PG-TO252-3 (DPAK) package, it provides 72W of power dissipation. Key parameters include an input capacitance (Ciss) of 1081pF at 400V and a threshold voltage (Vgs(th)) of 4V at 280µA. This component is suitable for applications in power supply units, server power, and industrial power systems. The operating temperature range is -40°C to 150°C.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 72W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 280µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1081 pF @ 400 V |
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