IPD5N03LAG
MOSFET N-CH 25V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPD5N03LAG, features a drain-source voltage of 25 V and a continuous drain current of 50 A at 25°C (Tc). This surface mount device, packaged in a PG-TO252-3-11 (TO-252-3, DPAK), offers a maximum on-resistance of 5.2 mOhm at 50 A and 10 Vgs. Key parameters include a gate charge of 22 nC maximum at 5 Vgs and an input capacitance of 2653 pF maximum at 15 Vds. The device operates across a temperature range of -55°C to 175°C (TJ). Applications can be found in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2V @ 35µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2653 pF @ 15 V |
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