IPD530N15N3GBTMA1
MOSFET N-CH 150V 21A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD530N15N3GBTMA1 is an N-channel Power MOSFET designed for high-efficiency applications. This device features a 150 V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C (Tc). With a low on-resistance (Rds On) of 53mOhm at 18A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 68W (Tc) and a gate charge (Qg) of 12 nC at 10V Vgs. Input capacitance (Ciss) is rated at 887 pF at 75 V. Operating across a wide temperature range of -55°C to 175°C (TJ), it is housed in a surface mount TO-252-3, DPAK package, supplied on tape and reel. This component is suitable for use in automotive and industrial power conversion systems requiring robust performance.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 35µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 887 pF @ 75 V |
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