IPD50R950CEATMA1
MOSFET N-CH 500V 4.3A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPD50R950CEATMA1, an N-Channel CoolMOS™ CE series power MOSFET. This component features a Vds of 500 V and a continuous drain current of 4.3 A at 25°C (Tc), with a maximum power dissipation of 53 W (Tc). The Rds(on) is specified at 950 mOhm maximum at 1.2 A and 13 V. Key parameters include a gate charge (Qg) of 10.5 nC maximum at 10 V and input capacitance (Ciss) of 231 pF maximum at 100 V. The device is housed in a PG-TO252-3 (TO-252-3, DPAK) surface mount package and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and general purpose power conversion.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.2A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 231 pF @ 100 V |
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