IPD50R800CEBTMA1
MOSFET N CH 500V 5A TO252Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-channel power MOSFET, part number IPD50R800CEBTMA1. This device features a 500V drain-source breakdown voltage and a continuous drain current rating of 5A at 25°C case temperature. The TO-252-3 (DPAK) surface mount package offers 800mOhm maximum on-resistance at 1.5A and 13V gate-source voltage. Key parameters include a gate charge of 12.4nC (max) and input capacitance of 280pF (max). With a maximum power dissipation of 40W (Tc), this MOSFET is suitable for applications in power supply units and lighting solutions. Operating temperature range is -55°C to 150°C (TJ). Packaged in Tape & Reel (TR).
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1.5A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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