IPD50R800CEAUMA1
CONSUMERManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' CoolMOS™ CE series N-Channel Power MOSFET, part number IPD50R800CEAUMA1, offers a 500 V drain-source breakdown voltage and a continuous drain current of 7.6 A at 25°C (Tc). This surface-mount device features a low on-resistance of 800 mOhm maximum at 1.5 A and 13 V gate drive voltage. With a maximum power dissipation of 60 W (Tc), it is suitable for demanding applications. The IPD50R800CEAUMA1 is typically found in consumer electronics power supplies and lighting solutions. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package and supplied on a Tape & Reel (TR). Key parameters include a typical gate charge of 12.4 nC at 10 V and an input capacitance of 280 pF maximum at 100 V.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1.5A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO252-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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