IPD50R800CEATMA1
MOSFET N CH 500V 5A TO252Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies CoolMOS™ CE series IPD50R800CEATMA1 is an N-channel power MOSFET designed for high-efficiency applications. Featuring a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 5 A at 25°C (Tc), this device offers a maximum power dissipation of 60 W (Tc). The surface-mount PG-TO252-3 package ensures ease of integration into printed circuit boards. Key electrical characteristics include a typical Rds On of 800 mOhm at 1.5 A and 13 V, and a gate charge (Qg) of 12.4 nC at 10 V. Input capacitance (Ciss) is rated at 280 pF maximum at 100 V. This component is suitable for use in power supply units, lighting, and industrial motor control applications. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1.5A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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