IPD50R650CEBTMA1
MOSFET N-CH 500V 6.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPD50R650CEBTMA1, a CoolMOS™ CE series N-channel MOSFET. This component features a 500 V breakdown voltage and a continuous drain current capability of 6.1 A at 25°C. Designed for surface mounting within a TO-252-3 (DPAK) package, it offers a maximum power dissipation of 47 W. Key electrical characteristics include a maximum on-resistance of 650 mOhm at 1.8 A and 13 V gate drive, with a typical gate charge of 15 nC at 10 V. Input capacitance (Ciss) is specified at a maximum of 342 pF at 100 V. The operating temperature range is -55°C to 150°C. This device is suitable for applications in power factor correction (PFC) and switch-mode power supplies (SMPS).
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 1.8A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 342 pF @ 100 V |
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