IPD50R650CEATMA1
MOSFET N-CH 500V 6.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series IPD50R650CEATMA1 is an N-Channel Power MOSFET designed for high-efficiency applications. This device features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.1A at 25°C (Tc). The Rds On is specified at a maximum of 650mOhm at 1.8A and 13V gate-source voltage. With a maximum power dissipation of 69W (Tc), this MOSFET is housed in a surface mount TO-252-3 (DPAK) package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 15nC at 10V and input capacitance (Ciss) of 342pF at 100V. Operating temperature range is -55°C to 150°C (TJ). This component is widely utilized in power supply units, server power, industrial power, and lighting applications.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 1.8A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 342 pF @ 100 V |
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