IPD50R520CPATMA1
LOW POWER_LEGACYManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CP series N-Channel Power MOSFET, part number IPD50R520CPATMA1. This surface mount device offers a Vds of 500 V and a continuous drain current (Id) of 7.1A at 25°C (Tc). Key electrical characteristics include a low Rds(on) of 520mOhm at 3.8A and 10V Vgs, with a gate charge (Qg) of 17 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 680 pF at 100V. The device supports a maximum power dissipation of 66W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (PG-TO252-3-313) and supplied on tape and reel, this MOSFET is suitable for low power applications in the consumer electronics and industrial sectors.
Additional Information
Series: CoolMOS™ CPRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 100 V |
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