IPD50R520CP
MOSFET N-CH 500V 7.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CP series IPD50R520CP is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 500 V drain-source breakdown voltage (Vds) and a continuous drain current (Id) of 7.1 A at 25°C (Tc). With a maximum power dissipation of 66 W (Tc) and a low on-resistance (Rds On) of 520 mOhm at 3.8 A and 10 V gate-source voltage, it offers excellent conduction losses. The device utilizes a surface mount TO-252-3, DPAK (2 Leads + Tab), SC-63 package (PG-TO252-3-11) suitable for automated assembly. Key parameters include a gate charge (Qg) of 17 nC at 10 V and input capacitance (Ciss) of 680 pF at 100 V. This MOSFET is commonly found in power supplies, lighting, and industrial motor control systems. It operates within an ambient temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: CoolMOS™ CPRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 100 V |
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