IPD50R500CEBTMA1
MOSFET N-CH 500V 7.6A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IPD50R500CEBTMA1 is an N-Channel Power MOSFET from the CoolMOS™ CE series. This component offers a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7.6A at 25°C (Tc). It features a maximum on-resistance (Rds On) of 500mOhm at 2.3A and 13V gate-source voltage (Vgs). The device has a gate charge (Qg) of 18.7 nC at 10V and an input capacitance (Ciss) of 433 pF at 100V. With a maximum power dissipation of 57W (Tc), this MOSFET is housed in a TO-252-3 (DPAK) surface mount package and is supplied on tape and reel. The operating temperature range is from -55°C to 150°C (TJ). This component is suitable for applications in power supply units and lighting.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 2.3A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 433 pF @ 100 V |
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