IPD50R500CEATMA1
MOSFET N-CH 500V 7.6A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET, part number IPD50R500CEATMA1. This TO-252-3 (DPAK) surface mount device features a 500V drain-source breakdown voltage and a continuous drain current capability of 7.6A (Tc). The Rds(on) is specified at 500mOhm maximum for a gate-source voltage of 13V and drain current of 2.3A. With a maximum power dissipation of 57W (Tc) and a maximum junction temperature of 150°C, this MOSFET is suitable for applications requiring efficient power switching in sectors such as industrial power supplies and lighting. Key parameters include a gate charge of 18.7 nC (max) at 10V and an input capacitance of 433 pF (max) at 100V. The device is supplied in Tape & Reel packaging.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 2.3A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 433 pF @ 100 V |
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