IPD50R399CPBTMA1
LOW POWER_LEGACYManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IPD50R399CPBTMA1, an N-Channel CoolMOS™ CP series power MOSFET. This device features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 9A at 25°C (Tc), with a maximum power dissipation of 83W (Tc). The Rds On is specified at a maximum of 399mOhm at 4.9A and 10V Vgs. Key parameters include a gate charge (Qg) of 23 nC at 10V and input capacitance (Ciss) of 890 pF at 100V. The device utilizes surface mount technology, packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (also known as PG-TO252-3-313), supplied on tape and reel. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply units and general-purpose switching.
Additional Information
Series: CoolMOS™ CPRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 330µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 100 V |
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