IPD50R399CP
MOSFET N-CH 500V 9A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CP series N-Channel Power MOSFET, part number IPD50R399CP. This device features a 500 V drain-source voltage (Vdss) and a continuous drain current (Id) of 9 A at 25°C (Tc). The Rds On is specified at a maximum of 399 mOhm at 4.9 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 23 nC at 10 V and input capacitance (Ciss) of 890 pF at 100 V. The MOSFET is housed in a PG-TO252-3-11 (TO-252-3, DPAK) surface mount package, suitable for applications requiring efficient power switching. Maximum power dissipation is 83 W (Tc). This component is utilized in power supply units and industrial automation.
Additional Information
Series: CoolMOS™ CPRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 330µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 100 V |
Request a Quote
Clients Also Buy
IPB60R099CPATMA1
MOSFET N-CH 600V 31A TO263-3
IPD60R385CPATMA1
MOSFET N-CH 600V 9A TO252-3
IPL60R199CPAUMA1
MOSFET N-CH 600V 16.4A 4VSON
