IPD50R380CEATMA1
MOSFET N-CH 500V 14.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series, part number IPD50R380CEATMA1, is an N-channel power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 14.1 A at 25°C (Tc), with a maximum power dissipation of 98 W (Tc). The Rds On (Max) is specified at 380 mOhm at 3.2 A and 13 V, with a typical gate charge (Qg) of 24.8 nC at 10 V. Input capacitance (Ciss) is a maximum of 584 pF at 100 V. The IPD50R380CEATMA1 is housed in a PG-TO252-3 (DPAK) surface mount package and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in power factor correction, switch mode power supplies, and LED lighting applications.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 98W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 260µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 584 pF @ 100 V |
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