IPD50R2K0CEBTMA1
CONSUMERManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET, part number IPD50R2K0CEBTMA1. This device features a 500 V drain-source breakdown voltage and a continuous drain current of 3.6 A (Tc) at 25°C. The Rds(on) is a maximum of 2 Ohms at 600 mA, 13 V, with a gate drive voltage of 13 V. It offers a maximum power dissipation of 33 W (Tc). Key parameters include a gate charge (Qg) of 6 nC @ 10 V and input capacitance (Ciss) of 124 pF @ 100 V. The operating temperature range is -55°C to 150°C (TJ). This component is housed in a PG-TO252-3 (TO-252-3, DPAK) surface-mount package and is supplied on tape and reel. It is commonly utilized in consumer power supply applications.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 600mA, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 50µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 124 pF @ 100 V |
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