IPD50R2K0CEAUMA1
MOSFET N-CH 500V 2.4A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-channel power MOSFET, part number IPD50R2K0CEAUMA1. This device features a 500V drain-to-source voltage (Vdss) and a continuous drain current of 2.4A (Tc) at 25°C. The IPD50R2K0CEAUMA1 is designed for surface mount applications in a TO-252-3, DPAK package. Key parameters include a maximum on-resistance (Rds On) of 2 Ohm at 600mA, 13V, and a gate charge (Qg) of 6 nC at 10V. With a maximum power dissipation of 33W (Tc), this MOSFET is suitable for power supply and lighting applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 600mA, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 50µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 124 pF @ 100 V |
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