IPD50R280CEATMA1
MOSFET N-CH 500V 13A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPD50R280CEATMA1 is an N-Channel Power MOSFET from the CoolMOS™ CE series. This device features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 13 A at 25°C (Tc). The Rds On is specified at a maximum of 280 mOhm at 4.2 A and 10 V gate-source voltage. With a maximum power dissipation of 119 W (Tc), this MOSFET is suitable for demanding applications. The IPD50R280CEATMA1 is available in a PG-TO252-3 surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 32.6 nC (max) at 10 V and an input capacitance (Ciss) of 773 pF (max) at 100 V. Its operating temperature range is -55°C to 150°C (TJ). This component finds application in power supply units, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.2A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 119W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 350µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 32.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 773 pF @ 100 V |
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