IPD50R1K4CEBTMA1
MOSFET N-CH 500V 3.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies CoolMOS™ CE series IPD50R1K4CEBTMA1 is a 500V N-Channel Power MOSFET designed for efficient power conversion. This device offers a continuous drain current of 3.1A at 25°C with a maximum power dissipation of 25W. Key parameters include a low on-resistance of 1.4Ohm at 900mA and 13V, and a gate charge of 1nC at 10V. Input capacitance (Ciss) is specified at a maximum of 178pF at 100V. The IPD50R1K4CEBTMA1 features a PG-TO252-3 (DPAK) surface mount package, suitable for applications requiring compact thermal management. Its robust design and performance characteristics make it suitable for use in power supplies, lighting, and motor control applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 900mA, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 178 pF @ 100 V |
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