IPD50R1K4CEAUMA1
MOSFET N-CH 500V 3.1A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET, part number IPD50R1K4CEAUMA1. This device features a 500V drain-source breakdown voltage and a continuous drain current of 3.1A at 25°C (Tc), with a maximum power dissipation of 42W (Tc). The N-Channel MOSFET is housed in a TO-252-3, DPAK (SC-63) surface mount package. Key electrical parameters include a maximum Rds(on) of 1.4 Ohm at 900mA and 13V, and an input capacitance (Ciss) of 178pF maximum at 100V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 900mA, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 178 pF @ 100 V |
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