IPD50P04P4L11AUMA1
MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS®-P2 series P-channel power MOSFET, part number IPD50P04P4L11AUMA1, offers a 40V drain-source voltage and a continuous drain current of 50A at 25°C (Tc). This device features a low on-resistance of 10.6mOhm maximum at 50A and 10V Vgs. The IPD50P04P4L11AUMA1 is designed for efficient power management applications, with a maximum power dissipation of 58W (Tc). It operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO252-3-313 surface mount package. Key parameters include a gate charge of 59 nC (Max) at 10V and input capacitance of 3900 pF (Max) at 25V. This component is utilized in automotive and industrial power control systems.
Additional Information
Series: OptiMOS®-P2RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 85µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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