IPD50P04P4L11ATMA1
MOSFET P-CH 40V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-P2 series P-Channel MOSFET, part number IPD50P04P4L11ATMA1, offers a 40V drain-source breakdown voltage and a continuous drain current of 50A at 25°C (Tc). This automotive-grade device features a low on-resistance of 10.6mOhm at 50A and 10V Vgs, with a maximum gate charge of 59nC at 10V. Designed for surface mounting in a TO-252-3, DPAK package, it has a maximum power dissipation of 58W (Tc) and an operating temperature range of -55°C to 175°C. Drive voltage ranges are specified from 4.5V to 10V, with a maximum gate-source voltage tolerance of ±16V. Applications include automotive power management, motor control, and high-current switching.
Additional Information
Series: OptiMOS™-P2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 85µA |
| Supplier Device Package | PG-TO252-3-313 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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