IPD50P04P413AUMA2
MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies P-Channel MOSFET, part number IPD50P04P413AUMA2, is from the OptiMOS®-P2 series. This device features a 40V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc), with a maximum power dissipation of 58W (Tc). The Rds On is specified at a maximum of 12.6mOhm at 50A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 51 nC at 10V and an input capacitance (Ciss) of 3670 pF at 25V. Mounting is via surface mount in a PG-TO252-3-313 package. This MOSFET is suitable for applications in automotive and industrial power management. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: OptiMOS®-P2RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 85µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3670 pF @ 25 V |
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