IPD50P04P413ATMA1
MOSFET P-CH 40V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD50P04P413ATMA1 is a P-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C (Tc). The low on-resistance of 12.6mOhm at 50A and 10V gate-source voltage minimizes conduction losses. With a maximum power dissipation of 58W (Tc), it is suitable for demanding thermal environments. The MOSFET utilizes advanced OptiMOS™ technology, offering excellent switching performance and low gate charge (Qg) of 51nC at 10V. Its surface mount TO-252-3 (DPAK) package facilitates automated assembly. Operating temperature range is -55°C to 175°C (TJ). This component is commonly found in automotive power management, industrial motor control, and power supply circuits.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 85µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3670 pF @ 25 V |
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