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IPD50P03P4L11ATMA2

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IPD50P03P4L11ATMA2

MOSFET P-CH 30V 50A TO252-31

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

P-Channel 30 V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-11

Additional Information

Series: OptiMOS®-P2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)58W (Tc)
Vgs(th) (Max) @ Id2V @ 85µA
Supplier Device PackagePG-TO252-3-11
GradeAutomotive
Vgs (Max)+5V, -16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3770 pF @ 25 V
QualificationAEC-Q101

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