IPD50N12S3L15ATMA1
MOSFET N-CHANNEL_100+Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD50N12S3L15ATMA1 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 120 V and a continuous drain current (Id) of 50 A at 25°C, with a maximum power dissipation of 100 W at the same temperature. Optimized for efficiency, it offers a low on-resistance (Rds On) of 15 mOhm at 50 A and 10 V. The device supports a gate drive voltage range from 4.5 V to 10 V, with a maximum gate charge (Qg) of 57 nC at 10 V and an input capacitance (Ciss) of 7180 pF at 25 V. Manufactured with advanced MOSFET technology, it operates across a wide temperature range of -55°C to 175°C. The IPD50N12S3L15ATMA1 is housed in a TO-252-3, DPAK package, suitable for surface mount applications, and is supplied in Tape & Reel (TR) packaging. This automotive-grade component is qualified to AEC-Q101, making it ideal for use in the automotive industry.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 60µA |
| Supplier Device Package | PG-TO252-3-11 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7180 pF @ 25 V |
| Qualification | AEC-Q101 |
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