IPD50N06S4L12ATMA1
MOSFET N-CH 60V 50A TO252-3-11Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD50N06S4L12ATMA1 is a 60V N-channel power MOSFET in a PG-TO252-3-11 package. This device offers a continuous drain current capability of 50A (Tc) at 25°C and a maximum power dissipation of 50W (Tc). Its low on-resistance is rated at 12mOhm maximum at 50A and 10V Vgs. Key parameters include a gate charge of 40 nC (max) at 10V Vgs and an input capacitance (Ciss) of 2890 pF (max) at 25V Vds. The device supports a gate-source voltage (Vgs) range of ±16V and a threshold voltage (Vgs(th)) of 2.2V (max) at 20µA. Operating temperature ranges from -55°C to 175°C (TJ). This surface mount component is suitable for applications in automotive and industrial power management. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 20µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 25 V |