IPD50N06S4L08ATMA1
MOSFET N-CH 60V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD50N06S4L08ATMA1 is a 60V N-channel power MOSFET designed for high-efficiency power conversion. This surface mount component, packaged in a PG-TO252-3-11 (DPAK), features a low on-resistance of 7.8mOhm at 50A and 10V Vgs, facilitating minimal conduction losses. With a continuous drain current capability of 50A at 25°C and a maximum power dissipation of 71W, it is suitable for demanding applications. Key electrical parameters include a gate charge of 64nC at 10V and input capacitance of 4780pF at 25V. The operating temperature range is -55°C to 175°C. This component is utilized in automotive, industrial power supplies, and telecommunications infrastructure.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 35µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |