IPD50N06S214ATMA1
MOSFET N-CH 55V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD50N06S214ATMA1 is a surface mount N-Channel MOSFET with a continuous drain current rating of 50A at 25°C (Tc) and a drain-to-source voltage of 55V. This device features a low on-resistance of 14.4mOhm at 32A and 10V drive voltage, with a gate charge of 52nC at 10V. The input capacitance (Ciss) is 1485pF at 25V. Designed for demanding applications, it offers a power dissipation of 136W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). The component is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, supplied on tape and reel. Applications include automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1485 pF @ 25 V |
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