IPD50N03S2L06ATMA1
MOSFET N-CH 30V 50A TO252-31Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPD50N03S2L06ATMA1, features a 30V drain-source voltage and a continuous drain current of 50A at 25°C (Tc). This AEC-Q101 qualified component offers a low on-resistance of 6.4mOhm at 50A and 10V Vgs, with a maximum power dissipation of 136W (Tc). Designed for surface mounting in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, it utilizes Metal Oxide technology. Key parameters include a gate charge (Qg) of 68 nC at 10V and input capacitance (Ciss) of 1900 pF at 25V. This device is suitable for automotive applications and operates within a temperature range of -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 85µA |
| Supplier Device Package | PG-TO252-3-11 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
| Qualification | AEC-Q101 |
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